View RD60HUF1_1088146.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

MITSUBISHI RF POWER MOS FET
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RD60HUF1
25.0+/-0.3 7.0+/-0.5 11.0+/-0.3
Silicon MOSFET Power Transistor 520MHz,60W DESCRIPTION
RD60HUF1 is a MOS FET type transistor specifically designed for UHF High power amplifiers applications. OUTLINE DRAWING
1
24.0+/-0.6
4-C2
*High power and High Gain: Pout>60W, Gp>7.7dB @Vdd=12.5V,f=520MHz *High Efficiency: 55%typ.on UHF Band
2 3
10.0+/-0.3
FEATURES
R1.6+/-0.15
0.1 -0.01
+0.05
APPLICATION
For output stage of high power amplifiers in UHF Band mobile radio sets.
5.0+/-0.3
4.5+/-0.7 6.2+/-0.7
18.0+/-0.3
3.3+/-0.2
PIN 1.Drain 2.Source 3.Gate UNIT:mm
ABSOLUTE MAXIMUM RATINGS
(Tc=25C UNLESS OTHERWISE NOTED)
SYMBOL VDSS VGSS Pch Tj Tstg Rth-c PARAMETER Drain tosource voltage Gateto source voltage Channel dissipation Junction Temperature Storage temperature Thermal resistance CONDITIONS RATINGS 30 +/-20 150 175 -40 to +175 1.0 UNIT V V W
C C C/W
Tc=25C
Junction to case
Note 1: Above parameters are guaranteed independently.
ELECTRICAL CHARACTERISTICS (Tc=25C , UNLESS OTHERWISE NOTED)
SYMBOL IDSS IGSS VTH Pout D PARAMETER Zerogate voltage drain current Gate to source leak current Gate threshold voltage Output power Drain efficiency Load VSWR tolerance CONDITIONS VDS=17V, VGS=0V VGS=10V, VDS=0V VDS=12V, IDS=1mA f=520MHz ,VDD=12.5V Pin=10W, Idq=2.5A VDD=15.2V,Po=60W(PinControl) Idq=2.5A,Zg=50 Load VSWR=20:1(All Phase) LIMITS MIN TYP MAX. 400 1 1.1 1.45 1.8 60 65 50 55 No destroy UNIT uA uA V W % -
Note : Above parameters , ratings , limits and conditions are subject to change.
RD60HUF1
MITSUBISHI ELECTRIC
1/7
REV.1 14 May. 2003
MITSUBISHI RF POWER MOS FET
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RD60HUF1
Vgs-Ids CHARACTERISTICS 10 8 6 4 2 0
Ta=+25C Vds=10V
Silicon MOSFET Power Transistor 520MHz,60W TYPICAL CHARACTERISTICS
DRAIN DISSIPATION VS. AMBIENT TEMPERATURE
180 CHANNEL DISSIPATION Pch(W) 160 140 120 80 60 40 20 0
0 40 80 120 160 200 AMBIENT TEMPERATURE Ta(C)
Ids(A)
100
0
1
2 Vgs(V)
3
4
Vds-Ids CHARACTERISTICS 10
Ta=+25C
Vds VS. Ciss CHARACTERISTICS 400 350
Vgs=3.1V
8 6
300 Ciss(pF) 250 200 150 100 50 0 0 5 10 Vds(V) 15 20
Ta=+25C f=1MHz
Ids(A)
Vgs=2.8V
4 2 0 0 2 4 6 Vds(V) 8 10
Vgs=2.5V Vgs=2.2V
Vds VS. Coss CHARACTERISTICS 350 300 250 Coss(pF) 200 150 100 50 0 0 5 10 Vds(V) 15 20 10 0 Crss(pF) 30 20
Ta=+25C f=1MHz
Vds VS. Crss CHARACTERISTICS 50 40
Ta=+25C f=1MHz
0
5
10 Vds(V)
15
20
RD60HUF1
MITSUBISHI ELECTRIC
2/7
REV.1 14 May. 2003
MITSUBISHI RF POWER MOS FET
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RD60HUF1
Pin-Po CHARACTERISTICS
Silicon MOSFET Power Transistor 520MHz,60W TYPICAL CHARACTERISTICS
Pin-Po CHARACTERISTICS 100 50 Po(dBm) , Gp(dB) , Idd(A) 40 30 20 10 0 10 20 30 Pin(dBm)
Gp Ta=+25C f=520MHz Vdd=12.5V Idq=2.5A Po
100
Po
100 80 Pout(W) , Idd(A) 80 60 40 20 0 40 d(%)
80
d
40 20 0 0 5 10 15 Pin(W)
Idd
Ta=25C f=520MHz Vdd=12.5V Idq=2.5A
40 20 0
20
Vdd-Po CHARACTERISTICS 90 80 70 60 Po(W) 50 40 30 20 10 0 4 6 8 10 Vdd(V) 12 14
Ta=25C f=520MHz Pin=10W Idq=2.5A Zg=ZI=50 ohm Po
Vgs-Ids CHARACTERISTICS 2 18 16 14 Idd(A) 10 8 6 4 2 0 0 2 3 Vgs(V) 4 Ids(A) 8 6 4 2
+75C -25C
+25C
10
Vds=10V Tc=-25~+75C
Idd
12
RD60HUF1
MITSUBISHI ELECTRIC
3/7
REV.1 14 May. 2003
d(%)
60
60
MITSUBISHI RF POWER MOS FET
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RD60HUF1
Silicon MOSFET Power Transistor 520MHz,60W TEST CIRCUIT
V gg V dd
C1
9.1K OHM
L1
C3
8.2k O HM
100OHM 10pF L1 18/10pF L2 RD60HUF1 C2
RF-IN 56pF 220pF
RF-OUT
10/5/8pF
5/22pF
18/10pF
2pF
12 8
6 12 38 63 75 90 100 C1:2200pF,10uF in parallel C2:2200pF*2 in parallel C3:2200pF,330uF in parallel L1:4Turns ,I.D6m m ,D1.6m m P = 1 s ilver plateted c opper wire L2:3Turns ,I.D6m m ,D1.6m m P = 1 s ilver plateted c opper wire
5 8 11 15 100
14
Note:B oard m aterial-Teflon s ubs trate M ic ro s trip line width= 4.2m m /50OHM ,er:2.7,t= 1.6m m Dim ens ions :m m
RD60HUF1
MITSUBISHI ELECTRIC
4/7
REV.1 14 May. 2003
MITSUBISHI RF POWER MOS FET
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RD60HUF1
Silicon MOSFET Power Transistor 520MHz,60W
INPUT/OUTPUT IMPEDANCE VS.FREQUENCY CHARACTERISTICS
f=520MHz Zin
f=520MHz Zout
f=300MHz Zout
f=300MHz Zin
Zo=10
f=440MHz Zout
f=440MHz Zin
Zin , Zout f (MHz)
300 440 520
Zin (ohm)
0.96-j0.22 2.00-j3.10 0.77+j0.66
Zout (ohm)
0.75-j0.12 0.30-j1.40 0.96+j0.49
Conditions Po=70W, Vdd=12.5V,Pin=10W Po=65W, Vdd=12.5V,Pin=10W Po=60W, Vdd=12.5V,Pin=10W
RD60HUF1
MITSUBISHI ELECTRIC
5/7
REV.1 14 May. 2003
MITSUBISHI RF POWER MOS FET
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RD60HUF1
Silicon MOSFET Power Transistor 520MHz,60W
RD60HUF1 S-PARAMETER DATA (@Vdd=12.5V, Id=500mA)
Freq. [MHz] 10 50 100 150 175 200 250 300 350 400 450 500 550 600 650 700 750 800 850 900 950 1000 S11 (mag) 0.909 0.910 0.923 0.935 0.944 0.949 0.957 0.961 0.964 0.969 0.974 0.975 0.977 0.978 0.982 0.983 0.979 0.982 0.985 0.980 0.981 0.981 (ang) -156.8 -177.1 178.6 175.5 173.9 172.5 169.2 166.2 163.3 159.8 157.0 153.8 151.0 147.8 145.1 141.9 139.5 136.7 133.7 130.9 128.0 124.9 (mag) 0.012 0.011 0.010 0.008 0.008 0.007 0.005 0.004 0.003 0.002 0.002 0.003 0.003 0.005 0.006 0.006 0.007 0.009 0.009 0.010 0.010 0.012 S21 (ang) 8.6 -10.8 -25.0 -32.2 -39.0 -41.7 -42.3 -40.2 -21.8 -4.8 38.1 38.4 49.4 53.8 54.4 50.3 51.8 56.2 49.6 46.5 47.2 43.8 S12 (mag) (ang) 30.933 98.0 6.014 75.6 2.796 60.1 1.678 46.1 1.351 40.5 1.109 36.2 0.804 27.2 0.583 18.3 0.450 12.0 0.368 6.8 0.296 2.3 0.238 -3.0 0.209 -6.1 0.178 -14.1 0.155 -17.5 0.136 -19.6 0.113 -17.5 0.104 -20.2 0.103 -33.7 0.084 -27.4 0.083 -35.1 0.071 -28.7 S22 (mag) 0.788 0.811 0.845 0.869 0.877 0.893 0.930 0.930 0.945 0.957 0.956 0.962 0.965 0.963 0.971 0.973 0.972 0.980 0.978 0.975 0.983 0.984 (ang) -166.6 -177.2 -178.5 178.3 177.0 175.6 172.3 169.2 166.0 162.4 159.5 156.5 153.4 150.1 147.4 144.5 141.5 138.4 136.2 133.1 130.4 128.0
RD60HUF1
MITSUBISHI ELECTRIC
6/7
REV.1 14 May. 2003
MITSUBISHI RF POWER MOS FET
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RD60HUF1
Silicon MOSFET Power Transistor 520MHz,60W
Keep safety first in your circuit designs! Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of non-flammable material or (iii) prevention against any malfunction or mishap.
RD60HUF1
MITSUBISHI ELECTRIC
7/7
REV.1 14 May. 2003

▲Up To Search▲

Price & Availability of RD60HUF1

	To Download RD60HUF1 Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .